| Part Number | FDS6673BZ_F085 |
| Manufacturer | Fairchild Semiconductor |
| Title | P-Channel PowerTrench MOSFET |
| Description | This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the ... |
| Features |
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely l...
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| Datasheet |
 FDS6673BZ_F085 Datasheet
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