| Part Number | FDR856P |
| Manufacturer | Fairchild Semiconductor |
| Title | P-Channel MOSFET |
| Description | SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol... |
| Features |
- 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8. High density cell design for extremely low RDS(ON).
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| Datasheet |
 FDR856P Datasheet
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