| Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications Primary DC-DC Switch Motor Bridge Switch Synchro... |
| Features |
Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design 100% UIL Tested RoHS Compliant
General Description
This N-Ch...
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| Datasheet |
 FDMS86320 Datasheet - 355.79KB |
