| Part Number | 30N60B3D |
| Manufacturer | Fairchild Semiconductor |
| Title | HGTG30N60B3D |
| Description | Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i...
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| Datasheet |
 30N60B3D Datasheet
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