| Part Number | 10N120BND |
| Manufacturer | Fairchild Semiconductor |
| Title | HGTG10N120BND |
| Description | Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.
The I...
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| Datasheet |
 10N120BND Datasheet
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