| Part Number | EMBA5N10A |
| Manufacturer | Excelliance MOS |
| Title | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 150mΩ ID 10A G UIS... |
| Features |
/ W
p.1
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMBA5N10A
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero...
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| Datasheet |
 EMBA5N10A Datasheet
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