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P12N60

ETC
Part Number P12N60
Manufacturer ETC
Title HGTP12N60
Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high inpu...
Features
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar trans...

Datasheet PDF File P12N60 Datasheet

P12N60   P12N60   P12N60  




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