| Part Number | 4N600 |
| Manufacturer | ETC |
| Title | N-Channel MOSFET |
| Description | The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suit... |
| Features |
• • • Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON)... |
| Datasheet |
 4N600 Datasheet
|
