| Part Number | GP201MHS18 |
| Manufacturer | Dynex Semiconductor |
| Title | Low VCE(SAT) Half Bridge IGBT Module |
| Description | GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Is... |
| Features |
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 200A 400A
APPLICATIONS
s s s s
11(C2) 1(E1C2) 2(E2)
...
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| Datasheet |
 GP201MHS18 Datasheet
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