| Part Number | CTLM17NS10-R3 |
| Manufacturer | CT Micro |
| Title | N-Channel MOSFET |
| Description | The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technol... |
| Features |
• Drain-Source Breakdown Voltage VDSS 100 V • Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃ • Continuous Drain Current at TA=25 ID =0.17A • Advanced high cell density Trench Technology • RoHS Compl... |
| Datasheet |
 CTLM17NS10-R3 Datasheet
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