| Part Number | CTD6006-T52 |
| Manufacturer | CT Micro |
| Title | N-Channel MOSFET |
| Description | The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technolog... |
| Features |
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A Continuous Drain Current at TC=25℃, ID =35A Advanced high cell density Trench Technology RoHS Complian... |
| Datasheet |
 CTD6006-T52 Datasheet
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