| Part Number | NESG2101M16 |
| Manufacturer | CEL |
| Title | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Description | NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications inc... |
| Features |
• • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACK... |
| Datasheet |
 NESG2101M16 Datasheet
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