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MRF5812G

Advanced Power Technology
Part Number MRF5812G
Manufacturer Advanced Power Technology
Title Bipolar Junction Transistor
Description Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Para...
Features



• Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix
  –Tape and Reel, 500 units R2 suffix
  –Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low ...

Datasheet PDF File MRF5812G Datasheet

MRF5812G   MRF5812G   MRF5812G  




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