| Part Number | ACE2607B |
| Manufacturer | ACE Technology |
| Title | P-Channel Enhancement Mode Field Effect Transistor |
| Description | ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particu... |
| Features |
VDS(V)=-30V, ID=-3.5A RDS(ON)=52mΩ@VGS=-10V RDS(ON)=68mΩ@VGS=-4.5V High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Curre... |
| Datasheet |
 ACE2607B Datasheet
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