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mip2e2dm Datasheet

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2 mip2e2dmU Silicon MOS type integrated circuit

(IPD) MIP2E2DMU MOS ■ • • ■ • U-G2 • 1: Control 2: Source 3: Drain ■ • ■ Ta = 25°C ± 3°C VD VC ID IDP IC Tch Tstg 700 10 0.585 0.82 0.1 150 −55 ∼ +150 V V A A A °C °C
Panasonic
Panasonic
mip2e2dmU pdf
1 mip2e2dmY Silicon MOS FET

MIP2E2DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A2 • 1: Control 2: Sourc
Panasonic
Panasonic
mip2e2dmY pdf



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