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No Image Part Number Description Manufacture PDF
166
       
cm20-12A NPN SILICON RF POWER TRANSISTOR

CM20-12A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CM20-12A is Designed for Class C, FM Land Mobile Applications up to 470 MHz. FEATURES: • Internal Input Matching
ASI
ASI
cm20-12A pdf
165
       
cm2004 8 MASK single chip

8位MASK单片机芯片CM2004 8 位 MASK 单片机芯片 CM2004 1.概述 CM2004 是一款 8 位 MASK 类型的 RISC 单片机。 该芯片可以凭借极其低廉的价格和
SHANGHAI BELLING
SHANGHAI BELLING
cm2004 pdf
164
       
cm2006 VGA Port Companion Circuit

PRELIMINARY CM2006 VGA Port Companion Circuit For Monitors Features • • • • Includes ESD protection, level-shifting, buffering and sync impedance matching VESA VSIS Versi
CMD
CMD
cm2006 pdf
163
       
cm2009 VGA Port Companion Circuit

CM2009 VGA Port Companion Circuit Features • • Includes ESD protection, level-shifting, buffering and sync impedance matching 7 channels of ESD protection for all VGA port con
CMD
CMD
cm2009 pdf
162
       
cm200C (CM200C / CM250C) TUNING FORK CRYSTAL UNITS

TUNING FORK CRYSTAL UNITS (SMD • Plastic Package) CM200C . CM250C FEATURES 3000pcs/reel 7Embeded with heat resistant cylinder type crystal bring highly stable characteristics. 7Automatic mounting
Citizen
Citizen
cm200C pdf
161
       
cm200DU-12F Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts

CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D
Powerex Power Semiconductors
Powerex Power Semiconductors
cm200DU-12F pdf
160
       
cm200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
cm200DU-12H pdf
159
       
cm200DU-12H Dual IGBTMOD 200 Amperes/600 Volts

CM200DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 200 Amperes/600 Volts TC Measured Point E F G E2 A B H J D C G1 E1 G2
Powerex Power Semiconductors
Powerex Power Semiconductors
cm200DU-12H pdf
158
       
cm200DU-24F HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE CM200DU-24F ¡IC ................................................................... 200A ¡VCES .......................................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
cm200DU-24F pdf
157
       
cm200DU-24F Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts

CM200DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/1200 Volts TC MEASURING POINT A D T (4 TYP.) F G2 B E
Powerex Power Semiconductors
Powerex Power Semiconductors
cm200DU-24F pdf
156
       
cm200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A D F S(4 - Mounting Holes) H B E T CM U J H 3 - M6 Nuts Q Q P N G K K K R M C L Descripti
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
cm200DU-24H pdf
155
       
cm200DU-24H Dual IGBTMOD 200 Amperes/1200 Volts

CM200DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 200 Amperes/1200 Volts A D T - (4 TYP.) H G2 F B E C L CM C2E1 E2 C
Powerex Power Semiconductors
Powerex Power Semiconductors
cm200DU-24H pdf

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