| Part Number | Description | Manufacture |
|---|---|---|
|
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s |
 Vishay |
