| Part Number | Description | Manufacture |
|---|---|---|
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Power Diodes • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Epitaxial construction High temperature soldering : 250°C / 10 seconds a |
 Multicomp |
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Power Diodes • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Epitaxial construction High temperature soldering : 250°C / 10 seconds a |
Multicomp |
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High-reliability hybrid integrated DC/DC converter (see Fig. 1 for outside view, and Table 1 for models) Range of input DC voltage: 18~36V, nominal input DC voltage 28V Output power: 5W Operating temperature (Tc): -55~+105 Input, output and case are isolated mutually Insulation resistance: R≥100MΩ (D |
 ECRIM |
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Switching diode 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 ROHM : MSD EIAJ : − JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Peak |
 ETC |
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1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak Low Power Loss A Fast Switching Ideally Suited for Use in High Frequency SMPS, Inve |
 WON-TOP |
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Silicon Epitaxial Planar Diode • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS119 Cathode band Light Blue Package Name MHD Package Code |
 Renesas |
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N-Channel Depletion-Mode MOS Transistor ce Cutoff Voltage Gate-Body Leakage Drain Cutoff Current Drain-Source On-Resistance Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)DSV VGS(OFF) IGSS |
 Siliconix |
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Hall-IC |
ETC |
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1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak Low Power Loss A Fast Switching Ideally Suited for Use in High Frequency SMPS, Inve |
WON-TOP |
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Schottky Rectifier • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) • Low Forward Voltage • Guard Ring Protection • High Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Ma |
 Micro Commercial Components |
| Total 1218 results |
