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M02N60 Matched Datasheet

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No Part Number Description Manufacture PDF
4 M02N60 N Channel MOSFET

N Channel MOSFET 2.0A M02N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to
Stanson Technology
Stanson Technology
M02N60 pdf
3 M02N601D Silicon N-Channel Power MOSFET

M02N601D 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. • 100% avalanche, EAS tested. • Suffix "G" indicates Halogen-fr
CITC
CITC
M02N601D pdf
2 M02N601D1 Silicon N-Channel Power MOSFET

M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. • 100% avalanche, EAS tested. • Suffix "G" indicates Halogen-f
CITC
CITC
M02N601D1 pdf
1 M02N60B N Channel MOSFET

N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F
Stanson Technology
Stanson Technology
M02N60B pdf


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