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No Part Number Description Manufacture PDF
33 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench
Fairchild Semiconductor
Fairchild Semiconductor
FDN302P pdf
32 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET

FDN304P June 2000 PRELIMINARY FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench proc
Fairchild Semiconductor
Fairchild Semiconductor
FDN304P pdf
31 FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET

FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It ha
Fairchild Semiconductor
Fairchild Semiconductor
FDN304PZ pdf
30 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET

FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It
Fairchild Semiconductor
Fairchild Semiconductor
FDN306P pdf
29 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET

FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench
Fairchild Semiconductor
Fairchild Semiconductor
FDN308P pdf
28 FDN327N N-Channel 1.8 Vgs Specified PowerTrench MOSFET

FDN327N October 2001 FDN327N N-Channel 1.8 Vgs Specified PowerTrench® MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized
Fairchild Semiconductor
Fairchild Semiconductor
FDN327N pdf
27 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET

FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench pro
Fairchild Semiconductor
Fairchild Semiconductor
FDN335N pdf
26 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench pr
Fairchild Semiconductor
Fairchild Semiconductor
FDN336P pdf
25 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced us
Fairchild Semiconductor
Fairchild Semiconductor
FDN337N pdf
24 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor

FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It
Fairchild Semiconductor
Fairchild Semiconductor
FDN338P pdf
23 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET

FDN339AN November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTren
Fairchild Semiconductor
Fairchild Semiconductor
FDN339AN pdf
22 FDN340P Single P-Channel / Logic Level / PowerTrench MOSFET

FDN340P September 200 February 2007 FDN340P SingleP-Channel, LogicLevel, PowerTrench® MOSFET GeneralDescription This P-Channel Logic Level MOSFET is produced usingFairchildSemiconductor advancedPo
Fairchild Semiconductor
Fairchild Semiconductor
FDN340P pdf


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