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F1060 Datasheet Search

F1060 Datasheet

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No Part Number Description Manufacture PDF
2 F1060 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1060 pdf
1 F1060CT Schottky Barrier Rectifiers

Production specification Schottky Barrier Rectifiers FEATURES z STSD F1030CT---STSD F1060CT Metal-Semiconductor Junction with Guard Ring. z Epit axial Construction. z Pb Lead-free Low Forward Vo
Tasund
Tasund
F1060CT pdf



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