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F101 Datasheet Search

F101 Datasheet

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No Part Number Description Manufacture PDF
11 F101 Diode

American Microsemiconductor
American Microsemiconductor
F101 pdf
10 F1010EL IRF1010EL

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching
Power MOSFET
Power MOSFET
F1010EL pdf
9 F1010ES IRF1010ES

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching
Power MOSFET
Power MOSFET
F1010ES pdf
8 F1010N IRF1010N

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D V
International Rectifier
International Rectifier
F1010N pdf
7 F1012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1012 pdf
6 F1014 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1014 pdf
5 F1015 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1015 pdf
4 F1016 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1016 pdf
3 F1018 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1018 pdf
2 F1019 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1019 pdf
1 F101L Diode

American Microsemiconductor
American Microsemiconductor
F101L pdf



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