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F1008 Datasheet Search

F1008 Datasheet

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No Part Number Description Manufacture PDF
1 F1008 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1008 pdf





F100 Match Datasheets

Part Number Description Manufacture PDF
F100136 4-Stage Counter / Shift Register

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100136 datasheet
F100124 Hex TTL-to-ECL Translator

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100124 datasheet
F1004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1004 datasheet
F1001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1001 datasheet
F100164 16 Input Multiplexer

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100164 datasheet
F100304 LOW POWER QUINT AND / NAND GATE

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100304 datasheet
F1003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
Polyfet RF Devices
Polyfet RF Devices
F1003 datasheet
F100180 HIGH-SPEED 6-BIT ADDER

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100180 datasheet
F100331 Low Power Triple D Flip-Flop

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100331 datasheet
F100329 Low Power Octal ECL/TTL Bidirectional Translator with Register

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station
National Semiconductor
National Semiconductor
F100329 datasheet



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