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D10 Datasheet Search

D10 Datasheet

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No Part Number Description Manufacture PDF
164 D10 Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards Th
STMicroelectronics
STMicroelectronics
D10 pdf
163 D1000 2SD1000

Renesas
Renesas
D1000 pdf
162 D1001 2SD1001

Renesas
Renesas
D1001 pdf
161 D1001UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED A
Seme LAB
Seme LAB
D1001UK pdf
160 D1002UK METAL GATE RF SILICON FET

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.
Seme LAB
Seme LAB
D1002UK pdf
159 D1003UK METAL GATE RF SILICON FET

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPL
Seme LAB
Seme LAB
D1003UK pdf
158 D1004 METAL GATE RF SILICON FET

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SI
Seme LAB
Seme LAB
D1004 pdf
157 D10040180GT GaAs Power Doubler

Product Specification D10040180GT GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior r
PDI
PDI
D10040180GT pdf
156 D10040180GTH GaAs Power Doubler

Product Specification D10040180GTH GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Super
PDI
PDI
D10040180GTH pdf
155 D10040200GT Product Specification

Product Specification D10040200GT GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • • • Excellent linearity
PDI
PDI
D10040200GT pdf
154 D10040200GTH GaAs Power Doubler

Product Specification D10040200GTH GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity
PDI
PDI
D10040200GTH pdf
153 D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID

D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description The D10040200PL1 is a Hybrid Power Doubler
RF Micro Devices
RF Micro Devices
D10040200PL1 pdf



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