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No Part Number Description Manufacture PDF
392 BDX10 Bipolar NPN Device

BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically seal
Seme LAB
Seme LAB
BDX10 pdf
391 BDX11 Bipolar NPN Device

BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Seme LAB
Seme LAB
BDX11 pdf
390 BDX12 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Seme LAB
Seme LAB
BDX12 pdf
389 BDX14 PNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (
Seme LAB
Seme LAB
BDX14 pdf
388 BDX14A PNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (
Seme LAB
Seme LAB
BDX14A pdf
387 BDX14A Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(
Inchange Semiconductor
Inchange Semiconductor
BDX14A pdf
386 BDX14AA PNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (
Seme LAB
Seme LAB
BDX14AA pdf
385 BDX16A Bipolar PNP Device

BDX16A Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.7
Seme LAB
Seme LAB
BDX16A pdf
384 BDX18 PNP SILICON TRANSISTOR EPITAXIAL BASE

ETC
ETC
BDX18 pdf
383 BDX18 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power am
SavantIC
SavantIC
BDX18 pdf
382 BDX18 Bipolar PNP Device

BDX18 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
Seme LAB
Seme LAB
BDX18 pdf
381 BDX18 PNP SILICON TRANSISTOR EPITAXIAL BASE

BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series a
Comset Semiconductors
Comset Semiconductors
BDX18 pdf


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