| Part Number | Description | Manufacture |
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Plastic Encapsulate Transistors * Amplifier and switching applications 3.2±0.2 1.4±0.1 o MAXIMUM RATINGS* TA=25 C unless otherwise noted 1.27±0.1 15.3±0.2 0.76±0.1 2.28 Typ. Symbol VCBO Paramete Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu |
 SeCoS |
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Plastic Medium Power Silicon NPN Transistor http://onsemi.com • Pb−Free Package is Available* 4.0 AMPERES POWER TRANSISTORS NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ |
 ON Semiconductor |
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SILICON POWER TRANSISTOR oltage BD439 IC=0.1A; IB=0 BD441 BD439 ICBO Collector cut-off current BD441 BD439 ICES Collector cut-off current BD441 IEBO Emitter cut-off current BD439 hFE-1 DC current gain BD441 hFE-2 DC current gain BD439 hFE-3 DC current gain BD441 fT Transitio |
 SavantIC |
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COMPLEMENTARY SILICON POWER TRANSISTORS BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CES I EBO Parameter |
 STMicroelectronics |
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NPN Epitaxial Silicon Transistor = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE = 5V, IC = 10mA VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 3 0.58 |
 Fairchild Semiconductor |
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POWER TRANSISTORS SCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 VCB=Rated VCBO, IE=0 ICBO Collector Cut off Current 100 100 100 100 100 Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage Collector |
 TRANSYS Electronics |
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Silicon NPN Power Transistors e noted Symbol ICBO ICES IEBO VCEO(SUS) VCE(SAT) Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Test Condi |
 Comset Semiconductors |
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COMPLEMENTARY SILICON POWER TRANSISTORS BE(ON) IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A hFE VCE=5.0V, IC=10mA (BD439, BD440) hFE VCE=5.0V, IC=10mA (BD441, BD442) hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=2.0A (BD439, BD440) hFE VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA MIN 60 80 |
 Central Semiconductor |
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EPITAXIAL SILICON POWER TRANSISTORS ERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441 Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage BD434 BD436 BD438 BD440 |
 CDIL |
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NPN Transistor Amplifier and switching applications TO-126 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BD439 BD441 60 80 V VCEO Collector-Emitter Voltage BD439 BD441 60 80 V VEBO IC PC TJ T |
 JCST |
| Total 15 results |
