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B1016 Datasheet

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2 B1016 2SB1016

2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector
ETC
ETC
B1016 pdf
1 B1016A 2SB1016A

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (s
Toshiba
Toshiba
B1016A pdf



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