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No Part Number Description Manufacture PDF
4258 AD4016M161RBA-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RBA-5 pdf
4257 AD4016M161RBB-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RBB-5 pdf
4256 AD4016M161RCA-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RCA-5 pdf
4255 AD4016M161RCB-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RCB-5 pdf
4254 AD4016M161RLA-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RLA-5 pdf
4253 AD4016M161RLB-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RLB-5 pdf
4252 AD4016M161RPA-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RPA-5 pdf
4251 AD4016M161RPB-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RPB-5 pdf
4250 AD4016M161RQA-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RQA-5 pdf
4249 AD4016M161RQB-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RQB-5 pdf
4248 AD4016M161RSA-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RSA-5 pdf
4247 AD4016M161RSB-5 Low voltage operation is more suitable to be used on battery backup/ portable electronic

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16
ETC
ETC
AD4016M161RSB-5 pdf


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