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A-GA10JT12 Datasheet Search

A-GA10JT12 Datasheet

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No Part Number Description Manufacture PDF
1 A-GA10JT12 Super Junction Transistor

Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Features • 225 oC maximum operating temperature •Best i
GeneSiC
GeneSiC
A-GA10JT12 pdf





A-GA10JT1 Match Datasheets

Part Number Description Manufacture PDF
A-GA10JT12 Super Junction Transistor

Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Features • 225 oC maximum operating temperature •Best i
GeneSiC
GeneSiC
A-GA10JT12 datasheet


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