http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf


8090 Datasheet Search

8090 Datasheet

Link : http://www.datasheet4u.com/share_search.php?sWord=8090

No Part Number Description Manufacture PDF
1 8090 LDMOS RF Power Field Effect Transistor

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Infineon Technologies AG
Infineon Technologies AG
8090 pdf





809 Match Datasheets

Part Number Description Manufacture PDF
8097-90 (809x-90) Microcontroller

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
8097-90 datasheet
8096-90 (809x-90) Microcontroller

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
8096-90 datasheet
8090 LDMOS RF Power Field Effect Transistor

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Infineon Technologies AG
Infineon Technologies AG
8090 datasheet
80960CA-16 SPECIAL ENVIRONMENT 80960CA-25/ -16 32-BIT HIGH-PERFORMANCE EMBEDDED PROCESSOR

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
80960CA-16 datasheet
80960MC EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
80960MC datasheet
80960CF-30 SPECIAL ENVIRONMENT 80960CF-30/ -25/ -16 32-BIT HIGH-PERFORMANCE SUPERSCALAR PROCESSOR

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
80960CF-30 datasheet
80960KB EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
80960KB datasheet
8097BH (809xBH) HMOS Microcontroller

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
8097BH datasheet
80960SB EMBEDDED 32-BIT MICROPROCESSOR WITH 16-BIT BURST DATA BUS

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
80960SB datasheet
8095BH (809xBH) HMOS Microcontroller

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860
Intel Corporation
Intel Corporation
8095BH datasheet


[1] 


Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components