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60N321 Datasheet Search

60N321 Datasheet

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No Part Number Description Manufacture PDF
1 60N321 GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector
Toshiba Semiconductor
Toshiba Semiconductor
60N321 pdf





60N32 Match Datasheets

Part Number Description Manufacture PDF
60N321 GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector
Toshiba Semiconductor
Toshiba Semiconductor
60N321 datasheet


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