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2 60N10 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 60N10 ·DESCRIPTION ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Spee
Inchange Semiconductor
Inchange Semiconductor
60N10 pdf
1 60N100D FGL60N100D

FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, an
Fairchild Semiconductor
Fairchild Semiconductor
60N100D pdf


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