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11
       
2sc2290 Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Powe
Toshiba Semiconductor
Toshiba Semiconductor
2sc2290 pdf
10
       
2sc2290 Silicon NPN POWER TRANSISTOR

HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (
HGSemi
HGSemi
2sc2290 pdf
9
       
2sc2290A SSB LINEAR POWER AMPLIFIER APPLICATIONS

2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteris
Toshiba Semiconductor
Toshiba Semiconductor
2sc2290A pdf
8
       
2sc2292 (2SCxxxx) Power Transistors

Aristo-Craft
Aristo-Craft
2sc2292 pdf
7
       
2sc2292 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2292 DESCRIPTION ·With TO-3 package ·High speed ,high voltage APPLICATIONS ·For high speed ,hig
SavantIC
SavantIC
2sc2292 pdf
6
       
2sc2293 (2SCxxxx) Power Transistors

Aristo-Craft
Aristo-Craft
2sc2293 pdf
5
       
2sc2293 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPL
Inchange Semiconductor
Inchange Semiconductor
2sc2293 pdf
4
       
2sc2295 Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 1.5 –0.05 +0.25 0.65±0.15
Panasonic Semiconductor
Panasonic Semiconductor
2sc2295 pdf
3
       
2sc2295 Silicon PNP epitaxial planer type

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 1.5 –0.05 +0.25 0.65±0.15
Panasonic Semiconductor
Panasonic Semiconductor
2sc2295 pdf
2
       
2sc2295 Silicon NPN Epitaxial Planar Type

SMD Type Silicon NPN Epitaxial Planar Type 2SC2295 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Optimum for RF amplification of FM/AM radios. High transition freq
Kexin
Kexin
2sc2295 pdf
1
       
2sc2298 HIGH GAIN AMPLIFIER

2SC2298 Silicon NPN Epitaxial Application High gain amplifier Outline TO-126 MOD 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Stora
Hitachi Semiconductor
Hitachi Semiconductor
2sc2298 pdf

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