2SK3074-VB 2SK3074-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 30 0.030 at

Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Inpu

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2SK3069 Silicon N Channel MOS FET High Speed Power Switching ADE-208-694I (Z) 10th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 m

2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier (Note)The TOSHIBA pr

2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R

2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R

Ordering number : ENN7224 2SK3072 N-Channel Silicon MOSFET 2SK3072 Ultrahigh-Speed Switching Applications Features • • Package Dimensions unit : mm

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance H

2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R

2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER (Note)The TOSHIBA pro

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance H

www.DataSheet4U.com 2SK3067 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3067 Chopper Regulator, DC−DC Converter and Moto

OEM: Hitachi MOSFET Transistor 2SK308 / K308 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transis

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer c

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effec

2SK3003 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 200 V VGSS ±20 V ID ±18 A * ID

Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK304 2SK304 D Symbol Applications For charge sensor, meter amplifier ci