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2SC5200 Datasheet

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No Part Number Description Manufacture PDF
9 2SC5200 NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for
Toshiba Semiconductor
Toshiba Semiconductor
2SC5200 pdf
8 2SC5200 NPN Epitaxial Silicon Transistor

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 TO-3PL
Unisonic
Unisonic
2SC5200 pdf
7 2SC5200 NPN Epitaxial Silicon Transistor

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Powe
Fairchild Semiconductor
Fairchild Semiconductor
2SC5200 pdf
6 2SC5200 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5200 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current s
SavantIC
SavantIC
2SC5200 pdf
5 2SC5200 POWER AMPLIFIER APPLICATION

Free Datasheet http:/// Free Datasheet http:///
New Jersey Semi-Conductor
New Jersey Semi-Conductor
2SC5200 pdf
4 2SC5200 150 Watt Silicon NPN Power Transistors

2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recomm
Thinki Semiconductor
Thinki Semiconductor
2SC5200 pdf
3 2SC5200 150 Watt Silicon NPN Power Transistors

2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recomm
Thinki Semiconductor
Thinki Semiconductor
2SC5200 pdf
2 2SC5200 Trans GP BJT NPN 230V 15A 3-Pin TO-264 Tube

New Jersey Semiconductor
New Jersey Semiconductor
2SC5200 pdf
1 2SC5200 High power NPN epitaxial planar bipolar transistor

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c■ Audio power amplifier rodu
STMicroelectronics
STMicroelectronics
2SC5200 pdf


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