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2SC3518 Datasheet Search

2SC3518 Datasheet

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No Part Number Description Manufacture PDF
5 2SC3518 Silicon Power Transistors

Silicon Power Transistors 2SC3518,3518-Z NPN DC/DC VCEO 60 V IC(pulse) 7.0 A hFE hFE = 100 MIN. (VCE = 1.0 V, IC = 2.0 A) VCE(sat) 0.3 V (IC = 2.0 A, IB = 0.2 A) TA = 25°C VCBO VCEO VEBO IC(DC) IC
Renesas
Renesas
2SC3518 pdf
4 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3

NEC
NEC
2SC3518-Z pdf
3 2SC3518-Z Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3518-Z DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro
Inchange Semiconductor
Inchange Semiconductor
2SC3518-Z pdf
2 2SC3518-Z NPN Silicon Epitaxia

SMD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0
Kexin
Kexin
2SC3518-Z pdf
1 2SC3518-Z SILICON POWER TRANSISTOR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took
Renesas
Renesas
2SC3518-Z pdf



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