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2SB1011 Datasheet

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2SB1011 Silicon PNP triple diffusion planar type

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
Panasonic Semiconductor
Panasonic Semiconductor
2SB1011 pdf






2SB101 Match Datasheets

Image Part Number Description Manufacture PDF
       
2SB1015 PNP transistor

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
Toshiba Semiconductor
Toshiba Semiconductor
2SB1015 datasheet
       
2SB1015 SILICON POWER TRANSISTOR

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
SavantIC
SavantIC
2SB1015 datasheet
       
2SB1011 Silicon PNP triple diffusion planar type

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
Panasonic Semiconductor
Panasonic Semiconductor
2SB1011 datasheet
       
2SB1018 SILICON POWER TRANSISTOR

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
SavantIC
SavantIC
2SB1018 datasheet
       
2SB1019 2SB1019

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
ETC
ETC
2SB1019 datasheet
       
2SB1016 SILICON POWER TRANSISTOR

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
SavantIC
SavantIC
2SB1016 datasheet
       
2SB1016 PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
Wing Shing Computer Components
Wing Shing Computer Components
2SB1016 datasheet
       
2SB1015 SILICON POWER TRANSISTOR

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
WesTech
WesTech
2SB1015 datasheet
       
2SB1019 SILICON POWER TRANSISTOR

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
SavantIC
SavantIC
2SB1019 datasheet
       
2SB1012 Silicon PNP Epitaxial

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open
Hitachi Semiconductor
Hitachi Semiconductor
2SB1012 datasheet

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