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No Part Number Description Manufacture PDF
2321 2SA0683 Silicon PNP epitaxial planar type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter C
Panasonic Semiconductor
Panasonic Semiconductor
2SA0683 pdf
2320 2SA0684 Silicon PNP epitaxial planar type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter C
Panasonic Semiconductor
Panasonic Semiconductor
2SA0684 pdf
2319 2SA0879 Silicon PNP epitaxial planar type

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±
Panasonic Semiconductor
Panasonic Semiconductor
2SA0879 pdf
2318 2SA0885 Silicon PNP epitaxial planar type

Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a compl
Panasonic Semiconductor
Panasonic Semiconductor
2SA0885 pdf
2317 2SA0886 Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolu
Panasonic Semiconductor
Panasonic Semiconductor
2SA0886 pdf
2316 2SA100 (2SA100 - 2SA104) Ge PNP Drift

ETC
ETC
2SA100 pdf
2315 2SA1001 Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) APPLICA
Inchange Semiconductor
Inchange Semiconductor
2SA1001 pdf
2314 2SA1001 Trans GP BJT PNP 250V 1.5A

New Jersey Semiconductor
New Jersey Semiconductor
2SA1001 pdf
2313 2SA1002 Silicon PNP Power Transistor

INCHANGE Semiconductor  isc Silicon PNP Power Transistor  isc Product Specification  2SA1002  DESCRIPTION  ·High Current Capability  ·Collector­Emitter Breakdown Voltage­  : V
INCHANGE
INCHANGE
2SA1002 pdf
2312 2SA1002 Trans GP BJT PNP 250V 1.5A

New Jersey Semiconductor
New Jersey Semiconductor
2SA1002 pdf
2311 2SA1003 Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1003 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) APPLICA
Inchange Semiconductor
Inchange Semiconductor
2SA1003 pdf
2310 2SA1003 Trans GP BJT PNP 250V 1.5A

New Jersey Semiconductor
New Jersey Semiconductor
2SA1003 pdf


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