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1SS395 Datasheet Search

1SS395 Datasheet

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No Part Number Description Manufacture PDF
1 1SS395 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS395 pdf





1SS39 Match Datasheets

Part Number Description Manufacture PDF
1SS391 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS391 datasheet
1SS396 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS396 datasheet
1SS398 Silicon Epitaxial Planar Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS398 datasheet
1SS399 Silicon Epitaxial Planar Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS399 datasheet
1SS397 Silicon Epitaxial Planar Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS397 datasheet
1SS395 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS395 datasheet
1SS393 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS393 datasheet
1SS394 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS394 datasheet
1SS392 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Toshiba Semiconductor
Toshiba Semiconductor
1SS392 datasheet
1SS390 Band switching diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum
Rohm
Rohm
1SS390 datasheet



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