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No Part Number Description Manufacture PDF
5 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch

1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertio
Hitachi Semiconductor
Hitachi Semiconductor
1SS110 pdf
4 1SS110 Switching Diode

Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements. 1SS110 Product Characteristic Absolute
Leshan Radio Company
Leshan Radio Company
1SS110 pdf
3 1SS118 Silicon Epitaxial Planar Diode

1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 (Z) Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass sea
Hitachi Semiconductor
Hitachi Semiconductor
1SS118 pdf
2 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching

1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • S
Hitachi Semiconductor
Hitachi Semiconductor
1SS119 pdf
1 1SS119 Silicon Epitaxial Planar Diode

1SS119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0564-0300 (Previous: ADE-208-180B) Rev.3.00 Mar 23, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery
Renesas
Renesas
1SS119 pdf


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