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Z0103MA

Silicon Bidirectional Thyristors



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Z0103MA pdf
Z0103MA
Sensitive Gate Triacs
Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive T O92 package which is readily adaptable for use in
automatic insertion equipment.
Features
OnePiece, InjectionMolded Package
Blocking Voltage to 600 V
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C)
Commutating di/dt of 1.6 A/msec at 110°C
High Surge Current of 8 A
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off-State Voltage
(TJ = 40 to +125°C)(1)
Sine Wave 50 to 60 Hz, Gate Open
VDRM,
VRRM
600
V
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = 50°C)
Peak NonRepetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
1.0
A
ITSM
8.0
A
I2t
0.35
A2s
Average Gate Power (TC = 80°C, t v 8.3 ms)
Peak Gate Current (t v 20 ms, TJ = +125°C)
Operating Junction Temperature Range
PG(AV)
IGM
TJ
1.0
1.0
40 to
+125
W
A
°C
Storage Temperature Range
Tstg 40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
1.0 AMPERE RMS
600 VOLTS
MT2
MT1
G
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
TO92 (TO226AA)
CASE 029
STYLE 12
MARKING DIAGRAM
Z0
10xMA
YWW G
G
1 23
x = 3,7,9
Y = Year
WW = Work Week
G = PbFree Package
(*Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
© Semiconductor Components Industries, LLC, 2012
January, 2012Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1 Publication Order Number:
Z0103MA/D
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Z0103MA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
RqJC
RqJA
TL
Max
50
160
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = +125°C
IDRM, IRRM
Peak OnState Voltage
(ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
VTM − −
IGT
0.15
0.15
0.15
0.25
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
IL
−−
−−
−−
−−
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 W)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
VGT
−−
−−
−−
−−
Gate NonTrigger Voltage
(VD = 12 V, RL = 30 W, TJ = 125°C)
All Four Quadrants
VGD 0.2
Holding Current
(VD = 12 Vdc, Initiating Current = 50 mA, Gate Open)
DYNAMIC CHARACTERISTICS
IH − −
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM,
Exponential Waveform, Gate Open, TJ = 110°C)
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt(c)
1.6
dv/dt
di/dt
10 30
−−
Max Unit
5.0 mA
500
1.56 V
mA
3.0
3.0
3.0
5.0
mA
7.0
15
7.0
7.0
V
1.3
1.3
1.3
1.3
1.3 V
7.0 mA
A/ms
V/ms
20 A/ms
http://onsemi.com
2



Part Number Z0103MA
Description Silicon Bidirectional Thyristors
Maker ON Semiconductor - ON Semiconductor
Total Page 7 Pages
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