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Winbond
Winbond


W24257AJ-8N

32K X 8 High Speed CMOS Static RAM


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W24257AJ-8N pdf
W24257A
32K × 8 HIGH SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W24257A is a high speed, low power CMOS static RAM organized as 32768 × 8 bits that
operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
High speed access time: 10/12/15/20 nS (max.)
Low power consumption:
Active: 400 mW (typ.)
Single +5V power supply
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
Available packages: 28-pin 300 mil SOJ, 330
mil SOP, skinny DIP and standard type one
TSOP (8 mm × 13.4 mm)
PIN CONFIGURATIONS
BLOCK DIAGRAM
A14 1
A12 2
28 VDD
27 WE
A7 3
26 A13
A6 4
25 A8
A5 5
24 A9
A4 6
23 A11
A3 7
22 OE
28-pin
A2 8
DIP
21
A10
A1 9
20 CS
A0 10
19 I/O8
I/O1 11
18 I/O7
I/O2 12
17 I/O6
I/O3 13
16 I/O5
V SS
14
15 I/O4
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
TSOP
28 A10
27 CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 VSS
20 I/O3
19 I/O2
18 I/O1
17 A0
16 A1
15 A2
VDD
VSS
A0
. DECODER
.
A14
CORE
ARRAY
CS
OE CONTROL
WE
DATA I/O
I/O1
.
.
I/O8
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0A14 Address Inputs
I/O1I/O8 Data Inputs/Outputs
CS Chip Select Input
WE Write Enable Input
OE Output Enable Input
VDD Power Supply
VSS Ground
Publication Release Date: May 1997
- 1 - Revision A14



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W24257AJ-8N pdf
W24257A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0 W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
TRUTH TABLE
CS OE WE
HXX
L HH
L LH
LXL
MODE
Not Selected
Output Disable
Read
Write
I/O1I/O8
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
IDD
IDD
IDD
OPERATING CHARACTERISTICS
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Input Leakage Current ILI VIN = VSS to VDD
Output Leakage
Current
ILO VI/O = VSS to VDD, CS = VIH
or OE = VIH or WE = VIL
Output Low Voltage
VOL IOL = +8.0 mA
Output High Voltage VOH IOH = -4.0 mA
Operating Power
Supply Current
IDD CS = VIL, I/O = 0 mA
Cycle = MIN
10
12
Duty = 100%
15
20
Standby Power
Supply Current
ISB CS = VIH
Cycle = MIN, Duty = 100%
ISB1 CS VDD -0.2V
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
MIN.
-0.5
+2.2
-10
-10
TYP.
-
-
-
-
MAX.
+0.8
VDD +0.5
+10
+10
UNIT
V
V
µA
µA
--
2.4 -
--
--
--
--
0.4 V
-V
170 mA
160 mA
150 mA
140 mA
30 mA
--
10 mA
-2-



Part Number W24257AJ-8N
Description 32K X 8 High Speed CMOS Static RAM
Maker Winbond - Winbond
Total Page 11 Pages
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