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Winbond
Winbond


W24257

32K X 8 High Speed CMOS Static RAM



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W24257 pdf
W24257
GENERAL DESCRIPTION
32K × 8 CMOS STATIC RAM
The W24257 is a slow speed, low power CMOS static RAM organized as 32768 × 8 bits that operates
on a single 5-volt power supply. This device is manufactured using Winbond's high performance
CMOS technology.
FEATURES
Low power consumption:
Active: 325 mW (max.)
Standby: 75 µW (max.) (LL-version)
150 µW (max.) (L-version)
Access time: 70 nS (max.)
Single +5V power supply
Fully static operation
PIN CONFIGURATIONS
All inputs and outputs directly TTL compatible
Three-state outputs
Battery back-up operation capability
Data retention voltage: 2V (min.)
Packaged in 28-pin 330 mil SOP,
standard type one TSOP (8 mm x 13.4 mm )
BLOCK DIAGRAM
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
V SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
SOP
28 V DD
27 #WE
26 A13
25 A8
24 A9
23 A11
22 #OE
21 A10
20 #CS
19 I/O8
18 I/O7
17 I/O6
16 I/O5
15 I/O4
VDD
V SS
A0
.
.
A14
DECODER
#CS
#OE
#WE
CONTROL
CORE
ARRAY
DATA I/O
I/O1
.
.
I/O8
#OE
A11
A9
A8
A13
#WE
VDD
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
TSOP
28 A10
27 #CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 VSS
20 I/O3
19 I/O2
18 I/O1
17 A0
16 A1
15 A2
PIN DESCRIPTION
SYMBOL
A0A14
I/O1I/O8
#CS
#WE
#OE
VDD
VSS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
Power Supply
Ground
Publication Release Date: February 2001
- 1 - Revision A16



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W24257 pdf
W24257
TRUTH TABLE
#CS #OE #WE
HXX
L HH
L LH
LXL
MODE
Not Selected
Output Disable
Read
Write
I/O1I/O8
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0 W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C for LL/L; -20 to 85° C for LE)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage
Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
VIL
VIH
ILI
ILO
VOL
VOH
IDD
ISB
ISB1
TEST CONDITIONS
-
-
VIN = VSS to VDD
VI/O = VSS to VDD, #CS = VIH
(min.) or #OE = VIH (min.) or
#WE = VIL (max.)
IOL = +4.0 mA
IOH = -1.0 mA
#CS = VIL (min.),
I/O = 0 mA Cycle = min.,
Duty = 100%
#CS = VIH (min.)
Cycle = min., Duty = 100%
#CS VDD -0.2V
LL/LE
L
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
MIN.
-0.5
+2.2
-2
-2
TYP. MAX.
- +0.8
- VDD +0.5
- +2
- +2
UNIT
V
V
µA
µA
--
2.4 -
--
0.4 V
-V
70 mA
--
--
--
3 mA
15 µA
30 µA
-2-



Part Number W24257
Description 32K X 8 High Speed CMOS Static RAM
Maker Winbond - Winbond
Total Page 10 Pages
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