http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



STMicroelectronics Electronic Components Datasheet


W20NM50FD

STW20NM50FD



No Preview Available !

W20NM50FD pdf
STW20NM50FD
N-CHANNEL 500V - 0.22- 20A TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE
VDSS
RDS(on)
ID
STW20NM50FD
500V
<0.25
20 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.22
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly recom-
mended for bridge topologies, in particular ZVS phase-
shift converters.
APPLICATIONS
s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
500
500
±30
20
14
80
214
1.42
20
–65 to 150
150
(1)ISD 20A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8



No Preview Available !

W20NM50FD pdf
STW20NM50FD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
0.585
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
www.DataSheet4U.com
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
10
700
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
Min.
3
Typ.
4
0.22
Max.
5
0.25
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
9S
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1380
pF
Coss
Output Capacitance
290 pF
Crss Reverse Transfer
Capacitance
40 pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
130 pF
Rg Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2.8
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/8



Part Number W20NM50FD
Description STW20NM50FD
Maker STMicroelectronics - STMicroelectronics
Total Page 8 Pages
PDF Download
W20NM50FD pdf
Download PDF File
W20NM50FD pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
W20NM50 STW20NM50 W20NM50
STMicroelectronics
PDF
W20NM50FD STW20NM50FD W20NM50FD
STMicroelectronics
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components