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STMicroelectronics Electronic Components Datasheet


W20NK50Z

STW20NK50Z


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W20NK50Z pdf
STP20NK50Z - STW20NK50Z
N-CHANNEL 500V - 0.23- 20A TO-220/TO-247
Zener-Protected SuperMESH™Power MOSFET
TARGET DATA
TYPE
VDSS RDS(on)
ID
Pw
STP20NK50Z
STW20NK50Z
500 V < 0.27 20 A 190 W
500 V < 0.27 20 A 190 W
s TYPICAL RDS(on) = 0.23
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
3
2
1
TO-247
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE
MARKING
STP20NK50Z
P20NK50Z
STW20NK50Z
W20NK50Z
PACKAGE
TO-220
TO-247
PACKAGING
TUBE
TUBE
July 2003
1/7
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W20NK50Z pdf
STP20NK50Z - STW20NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 20A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP20NK50Z
STW20NK50Z
500
500
± 30
20 20
10 10
64 64
190 190
1.51 1.51
4000
4.5
-55 to 150
-55 to 150
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
0.66
62.5
300
TO-247
0.66
50
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
20
TBD
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/7
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Part Number W20NK50Z
Description STW20NK50Z
Maker STMicroelectronics - STMicroelectronics
Total Page 7 Pages
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