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STMicroelectronics Electronic Components Datasheet


W150NF55

STW150NF55



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W150NF55 pdf
STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
ID
STB150NF55
www.DataSheet4U.cSoTmP150NF55
STP150NF55
55 V
55 V
55 V
<0.006
<0.006
<0.006
120 A(**)
120 A(**)
120 A(**)
s TYPICAL RDS(on) = 0.005
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-247
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D2PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(**)
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
Value
55
55
± 20
120
106
480
300
2.0
8
850
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 120A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
1/14



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W150NF55 pdf
STB150NF55 STP150NF55 STW150NF55
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
www.DataSheet4U.com
IDSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0)
ID = 250 µA VGS = 0
55
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 60 A
Min.
2
Typ.
0.005
Max.
4
0.006
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 60 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
160
4400
1050
350
Max.
Unit
S
pF
pF
pF
2/14



Part Number W150NF55
Description STW150NF55
Maker STMicroelectronics - STMicroelectronics
Total Page 14 Pages
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