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STMicroelectronics Electronic Components Datasheet


W14NB50

STW14NB50


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W14NB50 pdf
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® STW14NB50
N-CHANNEL 500V - 0.40 - 14A - TO-247
PowerMESHMOSFET
TYPE
STW14NB50
VDSS
500 V
RDS(on)
< 0.45
ID
14 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.40
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
www.DataSheet4U.com
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
Parameter
Drain-source Voltage (VGS = 0)at Tc = 100 oC
Drain- gate Voltage (RGS = 20 k)at Tc = 100 oC
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Value
500
500
± 30
14
8
52
190
1.51
Unit
V
V
V
A
A
A
W
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
4
-65 to 150
150
(1) ISD 14 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
April 1999
1/5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.



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STW14NB50
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.66
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
14
900
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Tc = 125 oC
Min.
500
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =6.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
0.4 0.45
14 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =6.5 A
Min.
9
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2100
300
30
pF
pF
pF
2/5



Part Number W14NB50
Description STW14NB50
Maker ST Microelectronics - ST Microelectronics
Total Page 5 Pages
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