High voltage fast-switching
NPN power transistor
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Switch mode power supplies
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a Hollow emitter structure to enhance
Figure 1. Internal schematic diagram
Table 1. Device summary
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.