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Vishay Intertechnology Electronic Components Datasheet


V10D45C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier



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V10D45C pdf
www.vishay.com
V10D45C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2
Top View
Bottom View
V10D45C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
IFSM
VF at IF = 5.0 A
45 V
100 A
0.41 V
TJ max.
150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual Common Cathode
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
V10D45C
45
10
5
100
- 40 to + 150
UNIT
V
A
A
°C
Revision: 09-Dec-13
1 Document Number: 89992
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

V10D45C pdf
www.vishay.com
V10D45C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.44
0.50
0.34
0.41
-
3
MAX.
-
0.58
-
0.50
500
15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D45C
Typical thermal resistance
per diode
per device
per device
RJC
RJA (1)(2)
3.5
2.5
48
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, without heatsink
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT
WEIGHT (g)
TO-263AC (SMPD) V10D45C-M3/I
0.55
TO-263AC (SMPD) V10D45CHM3/I (1)
0.55
Note
(1) AEC-Q101 qualified
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10 RthJA=RthJC=2.5oC/W
8
TA , RthJA=48oC/W
6
4
2
0
0 25 50 75 100 125
Case Temperature (°C) (D=duty cycle=0.5)
150
Fig. 1 - Forward Current Derating Curve
2.8
D = 0.8
2.4
D = 0.5
D = 0.3
2 D = 0.2
D = 1.0
1.6 D = 0.1
1.2
T
0.8
0.4
0
0
D = tp/T tp
12345
Average Forward Current (A)
6
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 09-Dec-13
2 Document Number: 89992
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Part Number V10D45C
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay - Vishay
Total Page 5 Pages
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