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Eupec GmbH
Eupec GmbH


T1651N60

Thyristors



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T1651N60 pdf
Technische Information / Technical Information
Netz Thyristor
Phase Control Thyristor
T 1651N 60...70TOH
N
.
Features:
Volle Sperrfähigkeit bei 125° mit 50 Hz
Hoher Stoßstrome und niedriger Wärme-
widererstand durch NTV-Verbindung
www.DataShezetw4Uis.ccohmen Silizium und Mo-Trägerscheibe.
Elektroaktive Passivierung durch a - C:H
Full blocking capability at 125°C with 50 Hz
High surge currents and low thermal resistance
by using low temperature-connection NTV between
silicon wafer and molybdenum.
Electroactive passivation by a - C:H
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts - und Rückwärts - Spitzensperrspannung f = 50 Hz
repetitive peak forward off-state and reverse voltage
VDRM,
VRRM
tvj min = -40°C
6000
6500
7000
tvj min = 0°C
6200
6700
7200
V
V
V
Durchlaßstrom-Grenzeffektivwert
RMS forward current
ITRMSM
3500 A
Dauergrenzstrom
mean forward current
tC = 85°C, f = 50Hz
tC = 60°C, f = 50Hz
ITAVM
1650 A
2220 A
Stoßstrom-Grenzwert
surge forward current
Grenzlastintegral
I2t-value
tvj = 25°C, tp = 10ms, VR = 0
tvj = tvj max, tp = 10ms, VR = 0
tvj = 25°C, tp = 10ms
tvj = tvj max, tp = 10ms
ITSM
I2t
50 kA
48 kA
12,5·106 A2s
11,5·106 A2s
Gehäusegrenzstrom
case non-rupture current
Sinushalbwelle tp = 10 ms
sine half wave tp = 10 ms
75 kA
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
f = 50Hz, vD = 0,67 VDRM
iGM = 3A, diG/dt = 6A/µs
(di/dt)cr
300 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
tvj = tvj max, vD = 0,67 VDRM
5. Kennbuchstabe / 5 th letter H
(dv/dt)cr
2000 V/µs
BIP AC / SM TM, 2003-01-28, Przybilla J. / Keller
Release 2
Seite/page 1



No Preview Available !

T1651N60 pdf
Technische Information / Technical Information
Netz Thyristor
Phase Control Thyristor
T 1651N 60...70TOH
N
.
Elektrische Eigenschaften / Electrical properties
www.DataSheet4U.com
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung / threshold voltage
Ersatzwiderstand / slope resistance
Durchlaßrechenkennlinien
500 A iT 5000 A
On - state characteristics for calculation
( )VT = A + B iT + C ln iT + 1 + D iT
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
Sperrverzögerungsladung
recovered charge
Rückstromspitze
peak reverse recovery current
Tvj = Tvj max, iT = 3kA
typ
vT 2,45
Max
2,65 V
Tvj = Tvj max
Tvj = Tvj max
Tvj = 25°C, vD = 6V
V(TO)
rT
typ
1,2
0,425
typ
A 0,774
B 0,000186
C -0,0199
D 0,0235
IGT
max
1,22
0,49
V
m
max
0,623
0,000271
0,0346
0,0173
350 mA
Tvj = 25°C, vD = 6V
VGT
2,5 V
Tvj = Tvj max, vD = 6V
Tvj = Tvj max, vD = 0,5 VDRM
Tvj = Tvj max, vD = 0,5 VDRM
IGD
VGD
20 mA
10 mA
0,4 V
Tvj = 25°C, vD = 12V, RA = 4,7
IH
350 mA
Tvj = 25°C, vD = 12V, RGK 10
iGM = 3A, diG/dt= 6 A/µs, tg = 20µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 747-6
tvj = 25°C,
iGM = 3A, diG/dt = 6A/µs
Tvj = Tvj max, iTM = ITAVM
vRM = 100V, vDM = 0,67 VDRM
dvD/dt = 20V/µs, -diT/dt = 10A/µs
4. Kennbuchstabe / 4 th letter O
Tvj = Tvj max
ITM = 2 kA, di/dt = 10 A/µs
VR = 0,5 VRRM, VRM = 0,8 VRRM
Tvj = Tvj max
ITM = 2 kA, di/dt = 10 A/µs
VR = 0,5 VRRM, VRM = 0,8 VRRM
IL
iD, iR
tgd
tq
Qr
IRM
4A
200 mA
2 µs
typ 650 µs
12 mAs
280 A
BIP AC / SM TM, 2003-01-28, Przybilla J. / Keller
Release 2
Seite/page 2



Part Number T1651N60
Description Thyristors
Maker Eupec GmbH - Eupec GmbH
Total Page 9 Pages
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